Imperfect oriented attachment: Dislocation generation in defect-free nanocrystals
Imperfect oriented attachment: Dislocation generation in defect-free nanocrystals
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DOI：
10.1126/science.281.5379.969
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发表时间：
1998-08-14
期刊：
影响因子：
56.9
通讯作者：
Banfield, JF
中科院分区：
文献类型：
--
作者：
Penn, RL;Banfield, JF
位错是固体中常见的缺陷，但所有的晶体都是从无位错的晶核开始的。人们对早期生长过程中位错形成的机制知之甚少。当纳米晶体材料在结晶学特定的表面上通过定向附着生长时，在界面上存在微小的取向错误，就会产生位错。两个或多个紧密排列的螺旋位错处的螺旋生长为产生复杂的多型性和多态结构提供了一种机制。这些结果对理解晶体生长具有重要意义。
Dislocations are common defects in solids, yet all crystals begin as dislocation-free nuclei. The mechanisms by which dislocations form during early growth are poorly understood. When nanocrystalline materials grow by oriented attachment at crystallographically specific surfaces and there is a small misorientation at the interface, dislocations result. Spiral growth at two or more closely spaced screw dislocations provides a mechanism for generating complex polytypic and polymorphic structures. These results are of fundamental importance to understanding crystal growth.