Electronic confinement and coherence in patterned epitaxial graphene
Electronic confinement and coherence in patterned epitaxial graphene
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DOI：
10.1126/science.1125925
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发表时间：
2006-05-26
期刊：
影响因子：
56.9
通讯作者：
de Heer, Wait A.
中科院分区：
文献类型：
--
作者：
Berger, Claire;Song, Zhimin;de Heer, Wait A.
采用真空石墨化法在单晶碳化硅上生长了超薄外延石墨。该材料可以使用标准纳米光刻方法来图案化。与碳纳米管的输运性质密切相关的输运性质由碳化硅界面处的单个外延石墨烯层主导，并揭示了电荷载流子的狄拉克性质。图案化结构显示出电子的量子限制和在4开尔文下超过1微米的相位相干长度，迁移率超过2.5平方米/伏秒。设想了全石墨烯电子相干器件和器件架构。
Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.