An in-situ TEM investigation of He bubble evolution in SiC
An in-situ TEM investigation of He bubble evolution in SiC
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DOI：
10.1088/1742-6596/371/1/012052
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发表时间：
2012-07
期刊：
影响因子：
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通讯作者：
C. Pawley;M. Beaufort;E. Oliviero;J. Hinks;J. Barbot;S. Donnelly
中科院分区：
文献类型：
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作者：
C. Pawley;M. Beaufort;E. Oliviero;J. Hinks;J. Barbot;S. Donnelly
本文使用两个TEM的功能与位于原位的辐射设施：材料调查的显微镜和离子加速器（迈阿密）在哈德斯菲尔德大学（University of Huddersfield他在硅中冒泡碳化物（SIC）并在高温下对气泡行为进行投资，并在SIC辐照过程中呈现了泡沫成核的初步结果。仅提出了对这些观察的租赁解释。
This paper presents work using the capabilities of two TEM with in-situ ion irradiation facilities: Microscope and Ion Accelerator for Materials Investigation (MIAMI) at the University of Huddersfield and Joint Accelerators for Nano-science and Nuclear Simulation JANNuS at Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Orsay, France, to study the nucleation and growth of He bubbles in silicon carbide (SiC) and to carry out an investigation into bubble behaviour at high temperatures and under displacing irradiation. Preliminary results on bubble nucleation and growth during He irradiation of SiC are presented together with results from a simultaneous anneal and high-energy heavy-ion irradiation of samples containing He bubbles. The displacing irradiation is observed to impede He bubble growth resulting in smaller bubbles than those obtained from an anneal alone. A tentative interpretation of these observations is presented.