Erbium-doped phosphosilicate fiber amplifiers: a comparison of configurations for the optimization of noise figure and conversion efficiency
Erbium-doped phosphosilicate fiber amplifiers: a comparison of configurations for the optimization of noise figure and conversion efficiency
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掺铒磷硅酸盐光纤放大器：优化噪声系数和转换效率的配置比较
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
R. Bolen
中科院分区：
文献类型：
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作者：
L. Qian;R. Bolen
扩展掺铒光纤放大器（EDFA）的放大带宽是扩展光纤传输容量的最具成本效益的手段之一。在传统的铝硅酸盐EDFA中，增益在1605nm以上急剧下降。几种新的或改性的铒基质材料已被用于将放大带扩展到传统的L带之外，例如亚碲酸盐、氧化铋、硅酸锑、P掺杂的铝硅酸盐和磷硅酸盐EDFA。虽然碲酸盐和铋氧化物基EDFA具有更宽的带宽相比，所展示的磷硅酸盐（P-Si）EDFA，P-Si EDFA已被证明提供更好的噪声性能时，增益带宽扩展到1620 nm。此外，与亚碲酸盐或氧化铋纤维不同，与传统的铝硅酸盐EDF相比，P-Si EDF不表现出增加的非线性或减弱的可靠性。此外，磷硅酸盐铒光纤与其他石英光纤兼容，可以熔接到标准SMF石英光纤，具有高回波损耗和极低的熔接损耗。这些特性使P-Si EDF成为商用扩展L波段EDFA的最佳竞争者。扩展L波段放大器设计中的一个关键问题是在保持低噪声系数的同时优化功率转换效率。在本文中，我们探讨了各种放大器的配置和比较他们的性能实验。我们报道了一种高功率P型硅掺铒光纤放大器，它通过一个单通低噪声级和一个或两个双通高效率级的组合，同时提高了PCE和NF。最佳配置产生高功率（22dBm）、低NF（在1570 - 1620 nm波段最大5.5dB）和高效率（增益平坦化后总PCE为27%）。
Extending the amplification bandwidth of erbium-doped fiber amplifiers (EDFAs) is one of the most cost-effective means of expanding the fiber transmission capacity. In conventional aluminosilicate EDFAs, gain drops sharply beyond 1605nm. Several new or modified erbium host materials have been used to extend the amplification band to beyond the conventional L-band, such as tellurite, bismuth-oxide, antimony silicate, P-doped aluminosilicate, and phosphosilicate EDFAs. Although tellurite and bismuth-oxide based EDFAs have wider bandwidths compared to that of demonstrated phosphosilicate (P-Si) EDFAs, P-Si EDFAs have been shown to provide better noise performance when the gain bandwidth is extended to 1620 nm. In addition, unlike tellurite or bismuth-oxide fibers, P-Si EDF does not exhibit increased nonlinearity or weakened reliability, compared to conventional aluminosilicate EDFs. Furthermore, phosphosilicate erbium fiber is compatible with other silica fibers and can be fusion spliced to the standard SMF silica fiber with high return loss and extremely low splice loss. These properties make the P-Si EDF a top contender for commercial extended L-band EDFAs. One key issue in the design of the extended L-band amplifiers is the optimization of power conversion efficiency while keeping the noise figure low. In this paper, we explore various amplifier configurations and compare their performances experimentally. We report high-power P-Si EDFAs with simultaneous improvement of PCE and NF by a combination of a single-pass low-noise stage with one or two double-pass high-efficiency stages. The best configuration yields high power (22dBm), low NF (5.5dB maximum over 1570-1620 nm band), and high efficiency (27% overall PCE after gain flattening).