Modulation of one‐dimensional electron density in n‐AlGaAs/GaAs edge quantum wire transistor
Modulation of one‐dimensional electron density in n‐AlGaAs/GaAs edge quantum wire transistor
复制标题
n-AlGaAs/GaAs 边缘量子线晶体管中一维电子密度的调制
DOI：
10.1063/1.111571
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发表时间：
1994
影响因子：
4
通讯作者：
H. Sakaki
中科院分区：
文献类型：
--
作者：
Yusui Nakamura;M. Tsuchiya;S. Koshiba;H. Noge;H. Sakaki
利用分子束外延技术在图案化衬底上的（111）B微刻面结构上成功制备了有效宽度为80 nm的AlGaAs/GaAs边缘量子线阵列。通过在导线上形成栅电极，场效应晶体管的作用已被成功地证明。在磁场中测得的导线电导表现出明显的Shubnikov-de哈斯（SdH）振荡，其朗道图显示出由一维（1D）子带的磁性减少引起的特征非线性。已经发现，随着栅极电压降低，SdH峰系统地向较低的磁场移动，表明在EQWI中的1D电子密度的成功调制。
An array of AlGaAs/GaAs edge quantum wires (EQWIs) with an effective width of 80 nm was successfully prepared on a (111)B microfacet structure on a patterned substrate by molecular beam epitaxy. By forming a gate electrode on the wires, field effect transistor action has been successfully demonstrated. The conductance of the wire measured in magnetic fields has exhibited a clear Shubnikov–de Haas (SdH) oscillation, and its Landau plot shows a characteristic nonlinearity caused by the magnetic depopulation of one‐dimensional (1D) subbands. It has been found that as the gate voltage decreases, the SdH peaks shift systematically toward lower magnetic fields, indicating a successful modulation of 1D electron density in the EQWI.