A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector
A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector
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DOI：
10.1088/1361-6528/abb506
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发表时间：
2020-12-11
期刊：
影响因子：
3.5
通讯作者：
Iyer, Shanthi
中科院分区：
文献类型：
--
作者：
Devkota, Shisir;Parakh, Mehul;Iyer, Shanthi
本文报道了碲化镓（GaTe）电池温度变化（T-GaTe）对Ga辅助分子束外延（MBE）生长的掺杂GaAsSb纳米线（NW）的形态、光学和电学性质的影响。这些研究导致了550摄氏度的最佳掺杂温度，用于生长具有最佳光电和结构特性的碲（Te）掺杂GaAsSb纳米线。Te掺入导致纳米线的纵横比减小，导致拉曼纵向光学/横向光学振动模式强度比增加，在高能量侧具有指数衰减尾部的大的光致发光发射，促进在系综纳米线中的隧道辅助电流传导和在单个纳米线中的显著光电流增强。展示了使用具有宽光谱范围和类似于1.2 μ m的更长截止波长的掺碲系综纳米线的肖特基势垒光电探测器（PD）。这些PD的响应度在580-620 A W（-1）范围内，探测度为1.2-3.8 x 10（12）Jones。掺杂GaAsSb纳米线具有进一步改进的潜力，为高性能近红外（NIR）光电探测应用铺平了道路。
This work reports a comprehensive investigation of the effect of gallium telluride (GaTe) cell temperature variation (T-GaTe) on the morphological, optical, and electrical properties of doped-GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxy (MBE). These studies led to an optimum doping temperature of 550 degrees C for the growth of tellurium (Te)-doped GaAsSb NWs with the best optoelectronic and structural properties. Te incorporation resulted in a decrease in the aspect ratio of the NWs causing an increase in the Raman longitudinal optical/transverse optical vibrational mode intensity ratio, large photoluminescence emission with an exponential decay tail on the high energy side, promoting tunnel-assisted current conduction in ensemble NWs and significant photocurrent enhancement in the single nanowire. A Schottky barrier photodetector (PD) using Te-doped ensemble NWs with broad spectral range and a longer wavelength cutoff at similar to 1.2 mu m was demonstrated. These PDs exhibited responsivity in the range of 580-620 A W(-1)and detectivity of 1.2-3.8 x 10(12)Jones. The doped GaAsSb NWs have the potential for further improvement, paving the path for high-performance near-infrared (NIR) photodetection applications.