Graphene Growth on Ni(111) by Transformation of a Surface Carbide
Graphene Growth on Ni(111) by Transformation of a Surface Carbide
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DOI：
10.1021/nl103383b
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发表时间：
2011-02-01
期刊：
影响因子：
10.8
通讯作者：
Batzill, Matthias
中科院分区：
文献类型：
--
作者：
Lahiri, Jayeeta;Miller, Travis;Batzill, Matthias
石墨烯在Ni（111）上的一种新的生长机制已经被发现，其发生在低于460摄氏度的温度下。在这些条件下，表面限制的碳化镍相与单层石墨烯共存。石墨烯通过碳化物沿一维相边界的面内转变沿着生长，这明显不同于在其他过渡金属上和在高于460 ℃的Ni上的已知生长过程，其中碳原子附着到石墨烯岛的“自由”边缘。
A novel growth mechanism of graphene on Ni(111) has been discovered that occurs at temperatures below 460 degrees C. At these conditions, a surface-confined nickel-carbide phase coexists with single layer graphene. The graphene grows by in-plane transformation of the carbide along a one-dimensional phase-boundary, which is distinctively different from known growth processes on other transition metals and on Ni above 460 degrees C, where carbon atoms attach to "free" edges of graphene islands.