A 120 GHz Dielectric Sensor in SiGe BiCMOS
A 120 GHz Dielectric Sensor in SiGe BiCMOS
复制标题
采用 SiGe BiCMOS 的 120 GHz 介电传感器
DOI：
10.1109/lmwc.2012.2234091
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发表时间：
2013
影响因子：
3
通讯作者：
S. Safavi
中科院分区：
文献类型：
--
作者：
K. Schmalz;J. Borngraber;M. Kaynak;W. Winkler;J. Wessel;M. Neshat;S. Safavi
介绍了一种采用背面刻蚀技术的120 GHz SiGe BiCMOS集成介质传感器。该传感器由一个带通滤波器，使用平面谐振器，在输入端的120 GHz的VCO，和在输出端的功率检测器。通过测量检测器输出电压的变化和由于放置在谐振器上的电介质样品引起的谐振器的频率响应的偏移来测试独立谐振器和传感器的灵敏度。模拟和实测性能的开发设备的介绍和讨论。
A highly sensitive 120 GHz integrated dielectric sensor in SiGe BiCMOS with back-side etching is presented. The sensor consists of a bandpass filter using a planar resonator, a 120 GHz VCO at the input, and a power detector at the output. The sensitivity of the stand-alone resonator and the sensor was tested by measuring the change in the detector output voltage and the shift in the frequency response of the resonator due to a dielectric sample placed over the resonator. Simulated and measured performance of the developed device are presented and discussed.