Evidence for moire excitons in van der Waals heterostructures
Evidence for moire excitons in van der Waals heterostructures
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DOI:
10.1038/s41586-019-0975-z
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发表时间:
2019-03-07
期刊:
影响因子:
64.8
通讯作者:
Li, Xiaoqin
中科院分区:
文献类型:
--
作者:
Kha Tran;Moody, Galan;Li, Xiaoqin
Recent advances in the isolation and stacking of monolayers of van der Waals materials have provided approaches for the preparation of quantum materials in the ultimate two-dimensional limit(1,2). In van der Waals heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moire superlattice(3). It is widely recognized that the moire superlattice can modulate the electronic band structure of the material and lead to transport properties such as unconventional superconductivity(4) and insulating behaviour driven by correlations(5-7); however, the influence of the moire superlattice on optical properties has not been investigated experimentally. Here we report the observation of multiple interlayer exciton resonances with either positive or negative circularly polarized emission in a molybdenum diselenide/tungsten diselenide (MoSe2/WSe2) heterobilayer with a small twist angle. We attribute these resonances to excitonic ground and excited states confined within the moire potential. This interpretation is supported by recombination dynamics and by the dependence of these interlayer exciton resonances on twist angle and temperature. These results suggest the feasibility of engineering artificial excitonic crystals using van der Waals heterostructures for nanophotonics and quantum information applications.