Development of Multi-Wire Electric Discharge Machining for SiC Wafer Processing
Development of Multi-Wire Electric Discharge Machining for SiC Wafer Processing
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SiC 晶圆加工多线放电加工的开发
DOI：
10.4028/www.scientific.net/msf.778-780.776
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Tomohisa Kato
中科院分区：
文献类型：
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作者：
Masumi Ogawa;K. Mine;Seiki Fuchiyama;Yasuhiro Tawa;Tomohisa Kato
为了将较大尺寸的晶锭切割成6英寸的碳化硅（SiC），我们正在开发多线电火花加工（EDM）。为了防止切割过程中的断线，我们开发了放电脉冲控制系统。到目前为止，我们用10根多丝切割机成功地切割了4英寸SiC块状单晶，没有断丝。还实现了高质量的切片表面（例如，对于3英寸晶片，SORI的约10 μm的小值）。通过抛光方法，估计EDM切割的晶片在整个表面上具有均匀的损伤层厚度。我们确认，通过EDM切割的晶片可以在后续工艺中通过研磨3英寸晶片来加工。通过对SiC多晶坯的切割，证实了用10根多丝电火花线切割可以切割出6英寸的晶锭。对于直径大于4英寸的铸锭，多线电火花加工将通过有效地去除线和工件之间的加工间隙中的加工屑而实际使用。
In order to slice the larger size ingot toward 6 inch of silicon carbide (SiC), we are developing Multi-wire Electric Discharge Machining (EDM). To prevent wire break during slicing, we have developed the electric discharge pulse control system. So far, with 10 multi-wires, we have succeeded in slicing of 4 inch SiC balk single crystal without wire break. High quality slicing surface (e.g. small value of around 10 μm of SORI for 3 inchi wafer) was also achieved. By polishing methode, EDM-sliced wafer was estimated to have the uniform thickness of damaged layer over the entire surface. We confirmed that the wafer sliced by EDM can be processed in the later process, by grinding the 3 inch wafer. And it was confirmed that 6 inch ingot can be sliced with 10 multi-wire EDM, by slicing the boule of SiC poly crystal. For the larger diameter ingot than 4 inch, Multi-wire EDM will be practically used by the effective removal of machining chips from the machining clearance between the wire and work.