Effect of N2 dielectric barrier discharge treatment on the composition of very thin SiO2-like films deposited from hexamethyldisiloxane at atmospheric pressure
Effect of N2 dielectric barrier discharge treatment on the composition of very thin SiO2-like films deposited from hexamethyldisiloxane at atmospheric pressure
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DOI：
10.1063/1.4764938
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发表时间：
2012-11
影响因子：
4
通讯作者：
R. Reuter;N. Gherardi;J. Benedikt
中科院分区：
文献类型：
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作者：
R. Reuter;N. Gherardi;J. Benedikt
薄的SiO2-类膜的连续沉积通过介质阻挡放电与氦气或氮气与少量混合物的六甲基二硅氧烷（HMDSO）的装置已被比较到一个逐层的沉积过程中，其中非常薄的（0.7 nm和2.5 nm）的膜从HMDSO前体沉积和处理后，由纯N2介质阻挡放电（DBD）。所呈现的结果清楚地表明，在后一过程中可以获得无碳的SiO2类膜，即使连续沉积导致富碳材料。N2-DBD产生的激发物种（可吸收物、离子或可能的光子）与表面键合碳的表面反应是造成这种效应的原因。此外，OH-自由和抗氧化膜，甚至可以在室温下基板温度。
The continuous deposition of thin SiO2-like films by means of a dielectric barrier discharge with helium or nitrogen gas with small admixture of hexamethyldisiloxane (HMDSO) has been compared to a layer-by-layer deposition process, in which a very thin (0.7 nm and 2.5 nm) films are deposited from HMDSO precursor and treated afterwards by a pure N2 dielectric barrier discharge (DBD). Presented results clearly show that a carbon-free SiO2-like films can be obtained in the latter process, even if the continuous deposition led to carbon-rich material. Surface reactions of N2-DBD generated excited species (metastables, ions, or possibly photons) with surface bonded carbon are responsible for this effect. Moreover, OH-free and oxidation-resistant films can be produced even at the room substrate temperature.