A simple calorimetric technique for high-efficiency GaN inverter transistor loss measurement
A simple calorimetric technique for high-efficiency GaN inverter transistor loss measurement
复制标题
用于高效 GaN 逆变器晶体管损耗测量的简单量热技术
DOI：
10.1109/wipda.2017.8170556
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
S. Bala
中科院分区：
文献类型：
--
作者：
He Li;Xiao Li;Zhangda Zhang;Jin Wang;Liming Liu;S. Bala
随着宽带隙（WBG）功率晶体管技术的快速发展，最新的碳化硅和氮化镓（SiC和GaN）基功率晶体管可用作中等功率（≥10 kW）转换系统的主开关。由于高频输出信号和高功率损耗比，基于电信号的效率测量可能非常具有挑战性。本文提出了一种新的基于量热法的损耗测量方法，以实现对WBG器件在电路工作过程中损耗的快速、准确测量。测量精度已在10 kW，98.8%峰值效率GaN基三相逆变器上得到验证。
With the rapid development of the wide bandgap (WBG) power transistor technology, the latest Silicon-Carbide and Gallium-Nitride (SiC and GaN) based power transistors can be used as the main switches in the medium power (≥10 kW) conversion systems. Electrical signal based efficiency measurement could be very challenging due to the high-frequency output signals and the high power to loss ratio. In this paper, a new calorimetric based loss measurement method is designed to realize fast and accurate power loss measurement of WBG devices during the circuit operation. The measurement accuracy has been verified on a 10 kW, 98.8% peak efficiency GaN-based three phase inverter.
影响因子：
7.7
作者：
L. Aarniovuori;J. Kolehmainen;A. Kosonen;M. Niemela;Huifeng Chen;W. Cao;J. Pyrhönen
通讯作者：
L. Aarniovuori;J. Kolehmainen;A. Kosonen;M. Niemela;Huifeng Chen;W. Cao;J. Pyrhönen