Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond
Effect of a radical exposure nitridation surface on the charge stability of shallow nitrogen-vacancy centers in diamond
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DOI：
10.7567/apex.10.055503
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发表时间：
2017-05-01
影响因子：
2.3
通讯作者：
Kawarada, Hiroshi
中科院分区：
文献类型：
--
作者：
Kageura, Taisuke;Kato, Kanami;Kawarada, Hiroshi
提出了一种远离射频等离子体的氮自由基暴露金刚石表面的氮化过程，以稳定金刚石表面附近带负电荷的氮空位中心。当氮覆盖层高达0.9层时，在加速电压为1 keV和2 keV的情况下，浅层氮注入形成的单NV%中心的平均Rabi值分别为0.40 +/- 0.06和0.46 +/- 0.03。这表明，通过自由基暴露过程终止氮产生的电荷状态适合于表面附近的单个NV中心，而不是在交替终止表面获得的状态。(C) 2017 .日本应用物理学会
A nitridation process of a diamond surface with nitrogen radical exposure far from the radio-frequency plasma for the stabilization of a negatively charged nitrogen-vacancy (NV%) centers near the surface is presented. At a nitrogen coverage of as high as 0.9 monolayers, high average Rabi contrasts of 0.40 +/- 0.06 and 0.46 +/- 0.03 have been obtained for single NV% centers formed by shallow nitrogen implantation with acceleration voltages of 1 and 2 keV, respectively. This indicates that nitrogen termination by a radical exposure process produces an electric charge state suitable for single NV- centers near the surface compared with the states obtained for alternatively terminated surfaces. (C) 2017 The Japan Society of Applied Physics