Interface reaction of Ta/NiO and its effect on exchange coupling
Interface reaction of Ta/NiO and its effect on exchange coupling
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DOI：
10.1016/s0304-8853(00)01337-8
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发表时间：
2001-02-01
影响因子：
2.7
通讯作者：
Xiao, JM
中科院分区：
文献类型：
--
作者：
Yu, GH;Chai, CL;Xiao, JM
以Ta为缓冲层，采用射频反应溅射和直流磁控溅射制备了Ta/NiO/NiFe/Ta多层膜。当NiO膜厚为50 nm时，NiO和NiFe之间的交换耦合场达到最大值120 Oe。用X射线光电子能谱（XPS）和峰分解技术研究了Ta/NiO/Ta界面区的成分和化学状态。结果表明，在Ta/NiO（和NiO/Ta）界面上存在一个“混合层”，这是由于发生了化学反应：2 Ta +5 NiO = 5 Ni + Ta 2 O 5。该界面反应对交换耦合有影响。通过XPS深度分布估计的“混合层”的厚度为约8-10 nm。(C)2001 Elsevier Science B. V.保留所有权利。
Ta/NiO/NiFe/Ta multilayers, utilizing Ta as the buffer layer, were prepared by RF reactive and DC magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 120 Oe at a NiO film thickness of 50 nm. The composition and chemical state at the interface region of Ta/NiO/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an 'intermixing layer' at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction: 2Ta + 5NiO = 5Ni + Ta2O5. This interface reaction has an effect on the exchange coupling. The thickness of the 'intermixing layer' as estimated by XPS depth-profiles was about 8-10 nm. (C) 2001 Elsevier Science B.V. All rights reserved.