Towards flexible magnetoelectronics:: Buffer-enhanced and mechanically tunable GMR of Co/Cu multilayers on plastic substrates
Towards flexible magnetoelectronics:: Buffer-enhanced and mechanically tunable GMR of Co/Cu multilayers on plastic substrates
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DOI：
10.1002/adma.200800230
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发表时间：
2008-09-03
影响因子：
29.4
通讯作者：
Schmidt, Oliver G.
中科院分区：
文献类型：
--
作者：
Chen, Yuan-fu;Mei, Yongfeng;Schmidt, Oliver G.
报道了在柔性衬底上通过引入光致抗蚀剂(PR)缓冲层在塑料(P)上沉积(Co1 nm/Cu1 nm)(N)多层膜的GMR增强效应。缓冲柔性衬底上的Co/Cu多层膜的GMR值甚至比热氧化Si(Si)衬底上的更大，这是因为反铁磁耦合分数的增加。GMR效应可以很容易地通过衬底拉伸进行机械调谐。
Strongly enhanced GMR on flexible substrates is reported for (Co_1 nm/Cu_1 nm)(N) multilayers deposited on plastics (P) by introducing a photoresist (PR) buffer layer. GMR values of Co/Cu multilayers on buffered flexible substrates are even larger than those on thermally oxidized Si (Si) substrates due to an increased antiferromagnetic coupling fraction. The GMR effect can be easily tuned mechanically by substrate stretching.