Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.
Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.
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对准平衡等离子体增强化学气相沉积生产的高质量超洁净石墨烯量子点进行有效拉曼增强
DOI：
10.1038/s41467-017-02627-5
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发表时间：
2018-01-15
影响因子：
16.6
通讯作者：
Wei D
中科院分区：
文献类型：
--
作者：
Liu D;Chen X;Hu Y;Sun T;Song Z;Zheng Y;Cao Y;Cai Z;Cao M;Peng L;Huang Y;Du L;Yang W;Chen G;Wei D;Wee ATS;Wei D
石墨烯被认为是潜在的表面增强拉曼光谱（SERS）衬底。然而，由于材料质量的原因，石墨烯量子点（GQDs）的应用成功有限。在这里，我们开发了一种准平衡等离子体增强化学气相沉积方法，直接在用作SERS衬底的SiO2/Si上生产高质量的超清洁GQDs，其尺寸小于2 nm。增强因子（取决于GQD尺寸）高于传统石墨烯片，灵敏度低至1 × 10−9 mol L−1罗丹明。这是由于具有原子表面清洁和大量边缘的高质量GQDs，以及由于态电子密度中存在Van Hove奇点而增强了分子与适当直径的GQDs之间的电荷转移。这项工作展示了一个敏感的SERS衬底，对于石墨烯基光子学和光电子学中GQDs的应用有价值。表面增强拉曼光谱（SERS）是一种很有前途的敏感光学传感器技术，通常使用粗糙的金属薄膜。在这里，Liu等人合成了高质量的石墨烯量子点薄膜，由于与Van Hove奇点的强烈光-物质相互作用，该薄膜提供了很大的SERS增强。
Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO2/Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 × 10−9 mol L−1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics. Surface-enhanced Raman spectroscopy (SERS) is a promising technology for sensitive optical sensors, generally using rough metal films. Here, Liu et al. synthesize high-quality graphene quantum dot films which offer a large SERS enhancement due to a strong light-matter interaction with Van Hove singularities.
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影响因子：
17.1
作者：
Cheng, Huhu;Zhao, Yang;Shi, Gaoquan
通讯作者：
Shi, Gaoquan
影响因子：
56.9
作者：
Britnell, L.;Ribeiro, R. M.;Novoselov, K. S.
通讯作者：
Novoselov, K. S.
气体分子在石墨烯纳米带上的吸附及其对纳米级分子传感器的意义
影响因子：
3.7
作者：
Huang, Bing;Li, Zuanyi;Duan, Wenhui
通讯作者：
Duan, Wenhui
影响因子：
17.1
作者：
Huh, Sung;Park, Jaesung;Nam, Jwa-Min
通讯作者：
Nam, Jwa-Min
石墨烯增强拉曼散射中的电荷转移机制
影响因子：
3.7
作者：
Ling, Xi;Moura, L. G.;Zhang, Jin
通讯作者：
Zhang, Jin