Dress code for infrared safe scattering in QED
Dress code for infrared safe scattering in QED
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DOI：
10.1093/ptep/ptad057
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发表时间：
2022-09
影响因子：
3.5
通讯作者：
Hayato Hirai;Sotaro Sugishita
中科院分区：
文献类型：
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作者：
Hayato Hirai;Sotaro Sugishita
我们研究量子电动力学中一般修饰态的 S 矩阵和包容截面。我们得到了一般穿着状态下S矩阵元素的红外分解公式。它使我们能够研究哪些穿着状态会导致红外安全的 S 矩阵元件。着装状态的条件可以解释为记忆效应，它只不过是渐近对称守恒定律。我们推导了一般穿着状态的广义软光子定理。我们还使用一般穿着状态来计算包含横截面。需要使用适当的初始和最终修饰状态来评估干涉效应，由于红外发散，使用福克状态无法正确计算干涉效应。
We study the S-matrix and inclusive cross-section for general dressed states in quantum electrodynamics. We obtain an infrared factorization formula of the S-matrix elements for general dressed states. It enables us to study what dressed states lead to infrared-safe S-matrix elements. The condition for dressed states can be interpreted as the memory effect which is nothing but the conservation law of the asymptotic symmetry. We derive the generalized soft photon theorem for general dressed states. We also compute inclusive cross-section using general dressed states. It is necessary to use appropriate initial and final dressed states to evaluate interference effects, which cannot be computed correctly by using Fock states due to the infrared divergence.