Characterization of nanostructure in Si1-xGex epilayers using x-ray reflectivity and fluorescence techniques
Characterization of nanostructure in Si1-xGex epilayers using x-ray reflectivity and fluorescence techniques
复制标题
使用 X 射线反射率和荧光技术表征 Si1-xGex 外延层中的纳米结构
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
Kang L. Wang
中科院分区：
文献类型：
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作者：
S. Kim;G. Kioseoglou;S. Huang;Y. Kao;Y. Soo;X. Zhu;Kang L. Wang
X射线反射率和X射线荧光角相关性（ADXRF）技术被用于非破坏性表征的纳米结构和界面形态的一系列Si 1 −xGex外延层生长在Si上的分子束外延。ADXRF方法是元素特定的，非常适合探测系统中Ge的深度分布，而不会干扰所研究的材料结构的完整性。层的厚度，界面粗糙度，Ge浓度，晶格参数，和X-射线光学常数为整个系列已被确定。结果表明，x值在0.27 ~ 0.83之间的Si 1 −xGex外延层既不是完全赝象的，也不是完全弛豫的。因此，我们已经证明，反射率和ADXRF方法可以作为有效的工具，用于研究各种类型的合金纳米结构。
X-ray reflectivity and angular dependence of x-ray fluorescence (ADXRF) techniques are used for nondestructive characterization of nanostructure and interface morphology in a series of Si1−xGex epilayers grown on Si by molecular-beam epitaxy. The ADXRF method is element specific, well suited for probing the depth profile of Ge in the system without disturbing the integrity of the material structure under study. The layer thickness, interfacial roughness, Ge concentration, lattice parameters, and x-ray optical constants for the entire series have been determined. The results show that the Si1−xGex epilayers with x values between 0.27 and 0.83 are neither completely pseudomorphic nor fully relaxed. We have thus demonstrated that the reflectivity and ADXRF methods can be used as effective tools for studying various types of nanostructure in alloys.