Scalable patterning of one-dimensional dangling bond rows on hydrogenated Si(001).
Scalable patterning of one-dimensional dangling bond rows on hydrogenated Si(001).
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DOI：
10.1021/nn4010236
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发表时间：
2013-04
期刊：
影响因子：
17.1
通讯作者：
F. Bianco;D. Bowler;J. Owen;S. Köster;M. Longobardi;C. Renner
中科院分区：
文献类型：
--
作者：
F. Bianco;D. Bowler;J. Owen;S. Köster;M. Longobardi;C. Renner
暴露在单氢化物硅（001）（Si（001）：H）表面上的硅悬挂键是高度反应性的，因此能够将原子和单分子位点选择性地吸收到通过控制氢原子的去除而设计的定制图案中。目前在Si（001）：H表面上的高分辨率氢光刻的实现依赖于使用扫描探针显微镜的尖端顺序去除氢原子。在这里，我们提出了一个可扩展的热处理，产生非常长的单二聚体宽的硅悬挂键行，适合于原子和分子自组装成前所未有的长度在Si（001）：H的一维结构。该行由标准的屈曲Si二聚体和一个意想不到的平面二聚体配置。
Silicon dangling bonds exposed on the monohydride silicon (001) (Si(001):H) surface are highly reactive, thus enabling site-selective absorption of atoms and single molecules into custom patterns designed through the controlled removal of hydrogen atoms. Current implementations of high-resolution hydrogen lithography on the Si(001):H surface rely on sequential removal of hydrogen atoms using the tip of a scanning probe microscope. Here, we present a scalable thermal process that yields very long rows of single dimer wide silicon dangling bonds suitable for self-assembly of atoms and molecules into one-dimensional structures of unprecedented length on Si(001):H. The row consists of the standard buckled Si dimer and an unexpected flat dimer configuration.