Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
Controlling threshold voltage and leakage currents in vertical organic field-effect transistors by inversion mode operation
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DOI：
10.1063/1.4937439
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发表时间：
2015-12
影响因子：
4
通讯作者：
Alrun A. Günther;C. Hossbach;M. Sawatzki;Daniel Kasemann;J. Bartha;K. Leo
中科院分区：
文献类型：
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作者：
Alrun A. Günther;C. Hossbach;M. Sawatzki;Daniel Kasemann;J. Bartha;K. Leo
近年来，人们对垂直有机晶体管作为克服传统有机场效应晶体管（OFET）局限性的一种手段的兴趣一直在稳步增长。然而，当前的垂直架构常常缺乏参数控制，因为它们仅限于某些材料和处理技术，使得晶体管阈值电压等的受控移位变得困难。在这篇文章中，我们提出了一种在反转状态下工作的垂直 OFET (VOFET)。通过改变 n 型 VOFET 中 p 掺杂层的厚度或掺杂浓度，我们能够以受控方式将阈值电压从 1.61 V（对于普通 n 型 VOFET）转移到 4.83 V（对于最高掺杂浓度 50 mol.%）。此外，发现20 mol的低掺杂浓度。 %可以通过降低源漏漏电流来改善VOFET的关断状态。
The interest in vertical organic transistors as a means to overcome the limitations of conventional organic field-effect transistors (OFETs) has been growing steadily in recent years. Current vertical architectures, however, often suffer from a lack of parameter control, as they are limited to certain materials and processing techniques, making a controlled shift of, e.g., the transistor threshold voltage difficult. In this contribution, we present a vertical OFET (VOFET) operating in the inversion regime. By varying the thickness or doping concentration of a p-doped layer in an otherwise n-type VOFET, we are able to shift the threshold voltage in a controlled manner from 1.61 V (for a normal n-type VOFET) to 4.83 V (for the highest doping concentration of 50 mol. %). Furthermore, it is found that low doping concentrations of 20 mol. % can improve the Off state of the VOFET through reduction of the source-drain leakage current.