Characterization of Defect Properties in Wide-Gap CuGaSe2 Thin-Film Solar-Cells
Characterization of Defect Properties in Wide-Gap CuGaSe2 Thin-Film Solar-Cells
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宽禁带 CuGaSe2 薄膜太阳能电池缺陷特性的表征
DOI：
10.1166/nnl.2018.2672
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发表时间：
2018
影响因子：
--
通讯作者：
Sakurai Takeaki
中科院分区：
文献类型：
--
作者：
Islam Muhammad Monirul;Ishizuka Shogo;Shibata Hajime;Niki Shigeru;Akimoto Katsuhiro;Sakurai Takeaki
宽禁带CuGaSe 2太阳能电池中的缺陷进行了研究，使用结电容技术，如导纳谱。CuGaSe 2吸收层的沉积与三阶段蒸发过程中不同的硒流量条件下。在CuGaSe 2的价带上方250 ~ 350 meV范围内，在所有样品中识别出浅缺陷A1和体缺陷A2。使用扫描电子显微镜的微观结构特性进行了研究。在高P Se条件下生长的CuGaSe 2样品显示出较低的缺陷密度沿着改善的结构特性，从而导致更好的器件性能。因此，在CuGaSe 2-膜的生长过程中控制Se-通量对于获得改善的材料性能似乎至关重要。
Defects in the wide-gap CuGaSe2 solar-cells were investigated using a junction-capacitance technique, such as admittance spectroscopy. CuGaSe2 absorber layers were deposited with three-stage evaporation process under various Se-flux conditions. A shallow defect, A1 around 35∼50 meV, and a bulk-type defect, A2 within 250∼350 meV above valance band of CuGaSe2 were identified in all the samples. Microstructural properties were studied using scanning electron microscopy. CuGaSe2 samples grown with higher P Se-condition show lower defect-density along with improved structural properties, thus resulting in better device performances. Thus, controlling of the Se-flux during growth of the CuGaSe2-films seems crucial to get improved material properties.