Analysis of ACPR performance for memoryless predistorter considering power amplifier memory effects
Analysis of ACPR performance for memoryless predistorter considering power amplifier memory effects
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考虑功放记忆效应的无记忆预失真器ACPR性能分析
DOI：
10.1109/mwsym.2004.1338970
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
J. Kenney
中科院分区：
文献类型：
--
作者：
H. Ku;J. Kenney
功率放大器（PA）中的记忆效应限制了基于无记忆查找表（LUT）或基于模型架构的预失真线性器的性能改进。本文研究了带无记忆预失真线性化器的扩音器的邻近通道功率比（ACPR）改进与记忆效应的关系。利用PA的输入和输出复包络信号，解析提取由记忆效应引起的ACPR退化。对170w PEP LDMOS放大器进行了测量，并利用无记忆预失真线性化器分析了由于记忆效应导致的ACPR性能下降。
Memory effects in a power amplifier (PA) limit the improvement of performance for predistortion linearizers based on memoryless look-up table (LUT) or model-based architectures. This paper investigates degradation of the adjacent channel power ratio (ACPR) improvement for a PA with memoryless predistortion linearizer with respect to the memory effects. Using the input and output complex envelope signals of PA, the ACPR degradation due to memory effects is analytically extracted. A 170 W PEP LDMOS PA is measured and its ACPR performance degradation due to memory effects is analyzed using a memoryless predistortion linearizer.