Gallium Nitride: Charge Neutrality Level and Interfaces
Gallium Nitride: Charge Neutrality Level and Interfaces
复制标题
氮化镓：电荷中性水平和界面
DOI：
10.1007/s11182-016-0691-1
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发表时间：
2016
影响因子：
0.6
通讯作者：
A. Ciszewski
中科院分区：
文献类型：
--
作者：
M. Grodzicki;P. Mazur;A. Ciszewski
对实验数据的分析揭示了金属/n-GaN(0001)势垒高度与金属功函数的关系，正如考虑半导体电荷中性水平的模型所预测的那样。在金属/p-GaN(Mg)势垒的情况下，观察到相应的实验数据发生了显著的散射，并在大多数结构中发生了近表面费米能级在ev+2.5 eV附近的钉扎，这是由于在掺镁GaN过程中形成了高密度的界面缺陷态的影响。
An analysis of experimental data revealed the dependence of the metal/n-GaN GaN(0001) barrier height on the metal work function, as predicted by the model that takes into account the charge neutrality level of the semiconductor. In case of the metal/p-GaN(Mg) barriers, significant scatter of the corresponding experimental data is observed and pinning of the near-surface Fermi level nearEv+ 2.5 eV takes place in most structures, which is due to the influence of high density of interface defect states formed during the process of the GaN doping by Mg impurity.