Electrical resistivity anomaly in P-MoTe,
Electrical resistivity anomaly in P-MoTe,
复制标题
P-MoTe 中的电阻率异常，
DOI：
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发表时间：
1978
期刊：
影响因子：
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通讯作者：
R. Friend
中科院分区：
文献类型：
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作者：
H. Hughes;R. Friend
在-10~295K温度范围内，对8-Mote单晶进行了平行和垂直于MO链方向的平面内电阻率测量。数据表明，在250K附近存在一级相变。Mote是通过过渡金属二卤化物形成的基团中的不寻常之处，它采用两种基本形式：a-Mote是稳定的，与MoS同构，MO原子被Te原子的三棱柱包围，而Fi-Mote在室温下是亚稳的，具有与WTE相似的更复杂的结构。在这里，金属原子位于Te原子的八面体中，但从中心向八面体移动，从而产生金属-金属锯齿链(Brown 1966，图L)。这种金属-金属键合使Te薄片弯曲，扭曲了Te八面体。温度高于-1200K时，为稳定晶型。由于层内的MO-MO链，这种材料表现出一维和二维特征。
In-plane resistivity measurements, both parallel and perpendicular to the MO chain direction, have been performed on single crystals of 8-MoTe, between - 10 K and 295 K. The data suggest the existence of a first-order phase transition near 250K. MoTe, is unusual among the group VIA transition metal dichalcogenides in that it adopts two basic forms; a-MoTe, is stable and isostructural with MoS,, with the MO atom surrounded by a trigonal prism of Te atoms, while fi-MoTe, is metastable at room temperature, and has a more complex structure similar to that of WTe,. Here the metal atoms lie in octahedra of Te atoms, but shifted away from the centre towards an octa- hedron face so that metal-metal zig-zag chains result (Brown 1966, figure l). This metal-metal bonding buckles the Te sheets, distorting the Te octahedra. Above - 1200 K, fi-MoTe, is the stable form. Because of the MO-MO chains within the layers, this material exhibits both one- and two-dimensional characteristics.