Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection
Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection
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DOI：
10.1109/tdmr.2011.2171487
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发表时间：
2012-03-01
影响因子：
2
通讯作者：
Ker, Ming-Dou
中科院分区：
文献类型：
--
作者：
Chen, Wen-Yi;Rosenbaum, Elyse;Ker, Ming-Dou
二极管触发可控硅整流器（DTSCR）用于片上静电放电保护。使用非常快的传输线脉冲的触发二极管串在确定瞬态电压过冲的作用进行了研究。仅包含多晶结触发二极管的DTSCR在7 A时的电压过冲仅为1.5 V，明显低于STI结二极管。仅具有STI绑定触发二极管的DTSCR具有较低的漏电流。因此，具有不同触发二极管配置的DTSCR可以适用于不同的应用，例如，例如，在一个实施例中，高速或低功率。
Diode-triggered silicon-controlled rectifiers(DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e. g., high speed or low power.