Carrier-resolved photo-Hall effect
Carrier-resolved photo-Hall effect
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DOI：
10.1038/s41586-019-1632-2
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发表时间：
2019-11-07
期刊：
影响因子：
64.8
通讯作者：
Shin, Byungha
中科院分区：
文献类型：
--
作者：
Gunawan, Oki;Pae, Seong Ryul;Shin, Byungha
多数载流子和少数载流子的基本参数——包括它们的类型、密度和迁移率——决定着半导体器件的性能，但却很难测量。虽然霍尔测量技术是目前提取多数载流子性质的标准，但少数载流子的性质通常只能通过应用单独的技术来获得。在这里，我们展示了经典霍尔测量的扩展-载流子分辨光霍尔技术-使我们能够同时获得多数和少数载流子的迁移率和浓度，以及复合寿命，扩散长度和复合系数。这是通过使用旋转平行偶极子线系统和方程Delta mu(H) = d(sigma H-2)/d sigma的交流场霍尔测量的进步实现的，该方程涉及空穴电子霍尔迁移率差（Delta mu(H)），电导率（sigma）和霍尔系数(H)。我们将这项技术应用于各种太阳能吸收器，包括高性能的碘化铅钙钛矿，并演示同时访问多数和少数载流子参数，并根据不同的光强度绘制结果图。这些信息隐藏在照片-霍尔测量（1,2）中，自1879年霍尔效应最初被发现以来一直无法获得(3)。多数载流子和少数载流子的同时测量应该有广泛的应用，包括在光伏和其他光电器件中。
The fundamental parameters of majority and minority charge carriers-including their type, density and mobility-govern the performance of semiconductor devices yet can be difficult to measure. Although the Hall measurement technique is currently the standard for extracting the properties of majority carriers, those of minority carriers have typically only been accessible through the application of separate techniques. Here we demonstrate an extension to the classic Hall measurement-a carrier-resolved photo-Hall technique-that enables us to simultaneously obtain the mobility and concentration of both majority and minority carriers, as well as the recombination lifetime, diffusion length and recombination coefficient. This is enabled by advances in a.c.-field Hall measurement using a rotating parallel dipole line system and an equation, Delta mu(H) = d(sigma H-2)/d sigma, which relates the hole-electron Hall mobility difference (Delta mu(H)), the conductivity (sigma) and the Hall coefficient (H). We apply this technique to various solar absorbers-including high-performance lead-iodide-based perovskites-and demonstrate simultaneous access to majority and minority carrier parameters and map the results against varying light intensities. This information, which is buried within the photo-Hall measurement(1,2), had remained inaccessible since the original discovery of the Hall effect in 1879(3). The simultaneous measurement of majority and minority carriers should have broad applications, including in photovoltaics and other optoelectronic devices.