Lateral manipulation of single atoms at semiconductor surfaces using atomic force microscopy
Lateral manipulation of single atoms at semiconductor surfaces using atomic force microscopy
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DOI：
10.1088/0957-4484/16/3/021
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发表时间：
2005-03-01
期刊：
影响因子：
3.5
通讯作者：
Morita, S
中科院分区：
文献类型：
--
作者：
Oyabu, N;Sugimoto, Y;Morita, S
介绍了利用非接触式原子力显微镜（NC-AFM）对半导体表面单原子进行横向操纵的实验结果。这些实验证明，沉积在表面上的吸附物，以及半导体表面的本征吸附原子，是适合于被操纵使用的短程相互作用力之间的最外层的原子的半导体尖端和原子的表面。对一些实验数据的分析表明，针尖对被操纵原子的作用是一个牵拉过程。原子的原子创造，在室温下，由几个固有的原子组成的图案的异质表面也提出。
Experimental results on the lateral manipulation of single atoms at semiconductor surfaces using non-contact atomic force microscopy (NC-AFM) are presented. These experiments prove that deposited adsorbates on top of a surface, as well as intrinsic adatoms of semiconductor surfaces, are suitable for being manipulated using the short-range interaction force acting between the outermost atoms of a semiconductor tip and the atoms at the surface. The analysis of the data from some of the experiments presented here indicates a pulling process of the tip on the manipulated atoms. The atom-by-atom creation, at room temperature, of patterns composed by a few inherent atoms of a heterogeneous surface is also presented.