Approaches towards ferroelectric control of thin film magnetism
Approaches towards ferroelectric control of thin film magnetism
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DOI：
10.1080/09500830701213387
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发表时间：
2007-03
影响因子：
1.2
通讯作者：
K. Dörr;C. Thiele;J.-W. Kim;O. Bilani;K. Nenkov;L. Schultz
中科院分区：
文献类型：
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作者：
K. Dörr;C. Thiele;J.-W. Kim;O. Bilani;K. Nenkov;L. Schultz
我们讨论了薄膜磁性铁电控制的三种不同方法以及最近的实验结果。首先，在压电 Pb(Mg1/3Nb2/3)0.72Ti0.28O3(001) 晶体上生长了掺杂 LaMnO3 的铁磁薄膜，并且可逆应变高达 0.15%。应变调制伴随着较大的磁化强度变化（例如，La0.7Sr0.3MnO3 在环境温度下磁化强度变化为 25%）、强电阻调制和磁居里温度的变化。其次，介绍了包括磁沟道和铁电栅极的多铁性场效应晶体管的概念。我们讨论压电栅极应变的影响。最后，描述了 HoMnO3 单相多铁性薄膜的初步结果。采用脉冲激光沉积技术制备了外延薄膜。 †值此 Hartmut Fueß 教授正式退休之际，我们谨将这篇文章献给他。在他的多年工作生涯中，他一直活跃在氧化物结构研究领域。
We discuss three different approaches towards ferroelectric control of thin film magnetism and recent experimental results. Firstly, ferromagnetic films of doped LaMnO3 were grown on piezoelectric Pb(Mg1/3Nb2/3)0.72Ti0.28O3(001) crystals and have been strained reversibly by up to 0.15%. The strain modulation is accompanied by large magnetization changes (for example, of 25% at ambient temperature in La0.7Sr0.3MnO3), strong resistance modulations and a shift of the magnetic Curie temperature. Secondly, the concept of a multiferroic field-effect transistor comprising a magnetic channel and a ferroelectric gate is introduced. We discuss the effect of piezoelectric gate strain. Finally, the first results on single-phase multiferroic films of HoMnO3 are described. Epitaxial films have been prepared by the pulsed laser deposition technique. †We would like to devote this article to Prof. Hartmut Fueß on the occasion of his official retirement. He has been active in the area of structural research on oxides throughout many years of his working life.