A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions
A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions
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DOI：
10.1002/adma.202006091
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发表时间：
2021-05
影响因子：
29.4
通讯作者：
Hyukjoon Yoo;I. S. Lee;Sujin Jung;S. Rho;B. Kang;Hyun Jae Kim
中科院分区：
文献类型：
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作者：
Hyukjoon Yoo;I. S. Lee;Sujin Jung;S. Rho;B. Kang;Hyun Jae Kim
金属氧化物薄膜晶体管在显示行业不断研究并量产。然而，他们的光电晶体管仍处于起步阶段。特别地，由于有限的光吸收波长范围和持久光电流（PPC）现象，利用金属氧化物半导体作为光电晶体管是困难的。许多研究试图改善可检测的光波长范围和 PPC 现象。本文综述了金属氧化物光电晶体管的最新研究，这些晶体管通过引入氧化物或非氧化物混合结构的吸收层来改善光波长范围和PPC现象。用于吸收长波长光的吸收层材料分为氧化物、硫属化物、有机材料、钙钛矿和纳米点。最后，介绍了与其他研究领域相结合的下一代融合研究，并详细说明了未来的研究方向。
Metal oxide thin‐film transistors have been continuously researched and mass‐produced in the display industry. However, their phototransistors are still in their infancy. In particular, utilizing metal oxide semiconductors as phototransistors is difficult because of the limited light absorption wavelength range and persistent photocurrent (PPC) phenomenon. Numerous studies have attempted to improve the detectable light wavelength range and the PPC phenomenon. Here, recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non‐oxide hybrid structure. The materials of the absorption layer applied to absorb long‐wavelength light are classified into oxides, chalcogenides, organic materials, perovskites, and nanodots. Finally, next‐generation convergence studies combined with other research fields are introduced and future research directions are detailed.