Effects of gas flame annealing on the structure of poly‐Si films
Effects of gas flame annealing on the structure of poly‐Si films
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气体火焰退火对多晶硅薄膜结构的影响
DOI：
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发表时间：
1995
期刊：
影响因子：
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通讯作者：
Masakuni Suzuki
中科院分区：
文献类型：
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作者：
Y. Masaki;M. Suzumi;W. Qu;Y. Kakimoto;A. Kitagawa;Masakuni Suzuki
采用透射电镜和电子自旋共振技术研究了气体火焰退火对多晶硅薄膜结构的影响。该退火技术涉及使用平气火焰将样品表面加热到1100°C以上，扫描速率为1 mm/s，加热速率约为260°C/min。电镜图像显示，随着退火次数（退火频率）的增加，二次晶粒继续生长，1360℃退火后的晶粒尺寸大于1 μm，而1150℃退火后的二次晶粒生长不显著。在1360℃退火后，样品的自旋密度从1.5×1018 cm−3下降到3.8×1017 cm−3。从自旋共振结果和电镜图像可以看出，二次晶粒长大包括晶界的初始结构重排和随后的晶粒长大两个过程。
The effect of gas flame annealing on the structure of polycrystalline Si films was studied using transmission electron microscopy and electron spin resonance. This annealing technique involved heating the sample surface to more than 1100 °C using flat gas flames with a scan rate of 1 mm/s and a heating rate of about 260 °C/min. Electron microscopy images revealed that the secondary grain growth proceeded with increasing the number of annealing times (annealing frequency) and that the grain size for samples annealed at 1360 °C was more than 1 μm whereas secondary grain growth was not significant for samples annealed at 1150 °C. Further, it was found that the spin density in the samples annealed at 1360 °C decreased from 1.5×1018 cm−3 to 3.8×1017 cm−3. It was concluded from the spin resonance results and the electron microscopy images that the secondary grain growth consists of two processes, the initial structural rearrangement of the grain boundaries and the subsequent grain growth.