Dopant redistribution at Si surfaces during vacuum anneal
Dopant redistribution at Si surfaces during vacuum anneal
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真空退火期间硅表面的掺杂剂重新分布
DOI：
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发表时间：
1987
期刊：
影响因子：
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通讯作者：
G. Scilla
中科院分区：
文献类型：
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作者：
M. Liehr;M. Renier;R. Wachnik;G. Scilla
我们用扩展电阻和二次离子质谱仪(SIMS)测量了在真空中高温退火的硅表面上的掺杂分布。发现了电活性p型掺杂剂的积累。SIMS及其扩散特性表明p型掺杂剂为硼。测量的掺杂分布可以解释为表明经过化学清洗的表面含有1012/cm2范围内的硼杂质，这些杂质在高温退火过程中被电激活并扩散到衬底中。结果表明，硼最初以氧化态存在于表面。任何标准超高真空系统中存在的硼硅酸盐部件都被确定为污染源。
We have measured dopant distribution profiles by spreading resistance and secondary ion mass spectroscopy (SIMS) profiling at silicon surfaces annealed to high temperature in vacuum. Accumulation of electrically active p‐type dopants is found to occur. The p‐type dopant is identified by SIMS and by its diffusion characteristics as being boron. The measured doping profiles can be interpreted as indicating that the chemically cleaned surface contains boron impurities in the 1012/cm2 range that become electrically activated and diffuse into the substrate during high‐temperature anneals. It is concluded that the boron exists initially in an oxidized state at the surface. Borosilicate parts present in any standard ultrahigh vacuum system are identified as a source of the pollution.