Gallium vacancies and the yellow luminescence in GaN
Gallium vacancies and the yellow luminescence in GaN
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DOI：
10.1063/1.117767
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发表时间：
1996-07-22
影响因子：
4
通讯作者：
Van de Walle, CG
中科院分区：
文献类型：
--
作者：
Neugebauer, J;Van de Walle, CG
我们已经调查了本征缺陷和本征缺陷-杂质复合物作为GaN中黄色发光的候选源。使用国家的最先进的第一性原理计算，我们发现强有力的证据表明，Ga空位（V-Ga）负责。V-Ga形成能对费米能级的依赖性解释了为什么只在n型GaN中观察到黄色发光。V-Ga缺陷能级是深受主态，与最近的压力实验一致。最后，我们表明，V-Ga和施主杂质之间的复合物的产生增强了V-Ga的形成。(C)1996年美国物理学会。
We have investigated native defects and native defect-impurity complexes as candidate sources for the yellow luminescence in GaN. Using state-of-the-art first-principles calculations, we find strong evidence that the Ga vacancy (V-Ga) is responsible. The dependence of the V-Ga formation energy on Fermi level explains why the yellow luminescence is observed only in n-type GaN. The V-Ga defect level is a deep acceptor state, consistent with recent pressure experiments. Finally we show that the formation of V-Ga is enhanced by the creation of complexes between V-Ga and donor impurities. (C) 1996 American Institute of Physics.