Effect of Indium Doping on Surface Optoelectrical Properties of Cu2ZnSnS4 Photoabsorber and Interfacial/Photovoltaic Performance of Cadmium Free In2S3/Cu2ZnSnS4 Heterojunction Thin Film Solar Cell
Effect of Indium Doping on Surface Optoelectrical Properties of Cu2ZnSnS4 Photoabsorber and Interfacial/Photovoltaic Performance of Cadmium Free In2S3/Cu2ZnSnS4 Heterojunction Thin Film Solar Cell
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DOI：
10.1021/acs.chemmater.5b04984
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发表时间：
2016-05-24
影响因子：
8.6
通讯作者：
Ikeda, Shigeru
中科院分区：
文献类型：
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作者：
Jiang, Feng;Ozaki, Chigusa;Ikeda, Shigeru
通过对In2S3/Cu2ZnSnS4堆叠层进行快速后热处理，获得了具有无cd缓冲层的Cu(2)ZnSnS（4-）基薄膜太阳能电池的最高转换效率为6.9%。结果表明，In2S3/Cu2ZnSnS4叠层的后加热促进了In2S3/Cu2ZnSnS4叠层的In2S3-Cu2ZnSnS4异质界面附近Cu2ZnSnS4层受体密度的增加。此外，In的扩散也导致Cu2ZnSnS4的带隙能从1.47 eV红移到1.40 eV。由于太阳能电池的外量子效率响应扩展到长波长区域，基于后加热In2S3/Cu2ZnSnS4堆叠的太阳能电池达到了大于20 mA cm（-2）的较大短路电流密度。在In2S3/Cu2ZnSnS4异质界面处，In2S3的导带最小值与Cu2ZnSnS4的导带最小值之间的能量差为0.11 eV的微正值，表明形成了“缺口型”导带偏移，有效抑制了界面复合。
Maximum conversion efficiency of 6.9% was 20 obtained over an electrodeposited Cu(2)ZnSnS(4-)based thin film solar cell with a Cd-free In2S3 buffer layer by applying a rapid post-heat treatment to the In2S3/Cu2ZnSnS4 stacked layer. It was found that post-heating of the In2S3/Cu2ZnSnS4 stack promoted an increment of the acceptor density of the Cu2ZnSnS4 layer close to the In2S3-Cu2ZnSnS4 heterointerface of the In2S3/Cu2ZnSnS4 stack. Moreover, the diffusion of In also resulted in a red-shift of the band gap energy of Cu2ZnSnS4 from 1.47 to 1.40 eV. Due to extension of external quantum efficiency response of the solar cell to the long wavelength region, the solar cell based on the post-heated In2S3/Cu2ZnSnS4 stack reached appreciably large short circuit current density of more than 20 mA cm(-2). The energy difference between the conduction band minimum of In2S3 and that of Cu2ZnSnS4 at the In2S3/Cu2ZnSnS4 heterointerface was determined to be a slightly positive value of 0.11 eV, indicating formation of a "notch-type" conduction band offset for efficient suppression of the interface recombination.