Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing
Improving the short-wave infrared response of strained GeSn/Ge multiple quantum wells by rapid thermal annealing
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DOI：
10.1016/j.vacuum.2023.111868
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发表时间：
2023-04
期刊：
影响因子：
4
通讯作者：
Haochen Zhao;Guangyang Lin;Chaoya Han;R. Hickey;Tuofu Zhama;Peng Cui;Tienna Deroy;Xu Feng;Chaoying Ni;Yuping Zeng
中科院分区：
文献类型：
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作者：
Haochen Zhao;Guangyang Lin;Chaoya Han;R. Hickey;Tuofu Zhama;Peng Cui;Tienna Deroy;Xu Feng;Chaoying Ni;Yuping Zeng
