Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum
Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum
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DOI：
10.1038/s41598-020-59442-0
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发表时间：
2020-02-13
影响因子：
4.6
通讯作者：
Hieu Pham Trung Nguyen
中科院分区：
文献类型：
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作者：
Velpula, Ravi Teja;Jain, Barsha;Hieu Pham Trung Nguyen
报道了首个在紫外波长范围内具有高度稳定发射的轴向AlInN紫外核壳纳米线发光二极管的演示。在AlInN层的外延生长过程中，会自发形成AlInN壳层，从而减少纳米线表面的非辐射复合。在室温下，AlInN纳米线在295 nm处的发射表现出高达52%的内部量子效率。通过改变生长条件，峰值发射波长可在290 ~ 355nm范围内变化。此外，在295 nm处记录到较强的横向磁（TM）偏振光发射，其强度是横向电（TE）偏振光的4倍。本研究为新型高性能紫外光发射器的制造提供了一种替代方法。
We report the demonstration of the first axial AlInN ultraviolet core-shell nanowire light-emitting diodes with highly stable emission in the ultraviolet wavelength range. During epitaxial growth of the AlInN layer, an AlInN shell is spontaneously formed, resulting in reduced nonradiative recombination on the nanowire surface. The AlInN nanowires exhibit a high internal quantum efficiency of similar to 52% at room temperature for emission at 295 nm. The peak emission wavelength can be varied from 290 nm to 355 nm by changing the growth conditions. Moreover, significantly strong transverse magnetic (TM) polarized emission is recorded, which is similar to 4 times stronger than the transverse electric (TE) polarized light at 295 nm. This study provides an alternative approach for the fabrication of new types of high-performance ultraviolet light emitters.