Robust and energy efficient non-volatile reconfigurable logic circuits with hybrid CMOS-MTJs
Robust and energy efficient non-volatile reconfigurable logic circuits with hybrid CMOS-MTJs
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具有混合 CMOS-MTJ 的稳健且节能的非易失性可重构逻辑电路
DOI：
10.1109/icemelec.2016.8074566
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
R. Vaddi
中科院分区：
文献类型：
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作者：
Varshine Kolla;T. Nagateja;R. Vaddi
随着CMOS技术的按比例缩小，泄漏电流不断增加，以及基于SRAM的存储技术的易失性，为诸如自旋转移矩（STT）MRAM等几种新兴的非易失性存储器带来了应用空间。它们的低功耗、可靠性以及较小的面积开销使其适用于广泛的应用。在本文中，提出了一种基于新型预充电灵敏放大器（PCSA）的非易失性与门查找表（AND - LUT），并使用混合0.18μm CMOS - 磁隧道结（MTJ）技术将其性能与基于传统SRAM灵敏放大器的与门查找表进行了比较。结果表明，所提出的设计具有更低的总功耗、更短的延迟、接近满幅的电压摆幅以及更低的能耗（约降低21%）。这为采用混合CMOS - MTJ技术的高能效非易失性逻辑电路（如新的FPGA架构）打开了大门。
Increasing leakage currents with CMOS technology scaling and the volatile nature of SRAM based memory technologies brings in the scope for several emerging nonvolatile memories such as spin transfer torque (STT) MRAMs. Their ability to consume low power, reliability and lower area overhead makes them eligible for a wide range of applications. In this paper, a novel pre charge sense amplifier (PCSA) based nonvolatile AND-LUT has been proposed and compare it's performance with conventional SRAM SA based AND LUT using hybrid 0.18μm CMOS-magnetic tunnel junctions (MTJ) technology. It has been demonstrated that the proposed design exhibits lower total power consumption, reduced latency, near full voltage swings, and lower energy (∼21% reduction). This opens door forenergy efficient non-volatile logic circuits such as new FPGA architectures with hybrid CMOS-MTJ technology.