Temperature dependent fatigue rates in thin-film ferroelectric capacitors
Temperature dependent fatigue rates in thin-film ferroelectric capacitors
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DOI：
10.1080/00150199408244720
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发表时间：
1994
期刊：
影响因子：
0.8
通讯作者：
C. Brennan;R. Parrella;D. Larsen
中科院分区：
文献类型：
--
作者：
C. Brennan;R. Parrella;D. Larsen
在78K到423K的温度范围内对PZT电容器进行了一系列的疲劳测量。极化损耗与疲劳循环次数的对数近似成正比，但疲劳率表现出强烈的温度依赖性，特别是在低温下。电容器在78K时很少疲劳，但在室温下疲劳迅速。疲劳率的温度依赖性符合Arrhenius函数，活化能为0.043 eV。这一数据不支持通常的解释，即对数衰减是由指数衰减的物质在活化能上均匀分布的集合造成的。提出了一种替代模型，该模型将疲劳归因于相反区域的形成，以释放带电缺陷的库仑能和应力能。结果是稳定的缺陷/区域结构，可以抵抗电开关。观察到的活化能被认为与电子离子的输运有关。
Abstract A series of fatigue measurements have been performed on PZT capacitors over temperatures ranging from 78K to 423K. The polarization loss is approximately proportional to the logarithm of the number of fatigue cycles, but the fatigue rate shows a strong temperature dependence, particularly at low temperatures. The capacitors fatigue very little at 78K but fatigue rapidly at room temperature. The temperature dependence of the fatigue rate fits an Arrhenius function with an activation energy of 0.043 eV. This data does not support the common interpretation that logarithmic decay results from an aggregate of exponentially decaying species uniformly distributed in activation energy. An alternative model is proposed that attributes fatigue to the formation of opposing domains to relieve the Coulombic and stress energy of charged defects. The result is stable defect/domain structures that resist electrical switching. The observed activation energy is presumed to pertain to the transport of electronic ch...