Awaking of ferromagnetism in GaMnN through control of Mn valence
Awaking of ferromagnetism in GaMnN through control of Mn valence
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DOI：
10.1063/1.2408646
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发表时间：
2006-08
影响因子：
4
通讯作者：
S. Sonoda;I. Tanaka;F. Oba;H. Ikeno;Hiroyuki Hayashi;Tomoyuki Yamamoto;Y. Yuba;Kenichi Yoshida;Masahiko Aoki;M. Asari;Y. Akasaka;K. Kindo;H. Hori
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文献类型：
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作者：
S. Sonoda;I. Tanaka;F. Oba;H. Ikeno;Hiroyuki Hayashi;Tomoyuki Yamamoto;Y. Yuba;Kenichi Yoshida;Masahiko Aoki;M. Asari;Y. Akasaka;K. Kindo;H. Hori
通过对分子束外延合成的样品进行温和的氢化处理，唤醒了GaMnN薄膜的室温铁磁性。用Mn-L2，3近边X射线吸收精细结构技术监测了Mn原子的局域环境。在氢化前后，掺杂的Mn离子都存在于Ga的替代位上。未检测到第二相。氢化后，Mn的主要价态由3+变为2+。这一结果支持了当Mn2+和Mn3+共存时铁磁性发生的模型，并且中间禁带中的空穴起到了磁耦合的作用。
Room temperature ferromagnetism of GaMnN thin film is awaked by a mild hydrogenation treatment of a sample synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn-L2,3 near edge x-ray absorption fine structure technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from 3+ to 2+ by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the midgap Mn band mediate the magnetic coupling.