Impact of Different Barrier Layers and Indium Content of the Channel on the Analog Performance of InGaAs MOSFETs
Impact of Different Barrier Layers and Indium Content of the Channel on the Analog Performance of InGaAs MOSFETs
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DOI：
10.1109/ted.2013.2249071
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发表时间：
2013-04
影响因子：
3.1
通讯作者：
S. Tewari;A. Biswas;A. Mallik
中科院分区：
文献类型：
--
作者：
S. Tewari;A. Biswas;A. Mallik
InGaAs MOSFET中的势垒层由于增强的电子迁移率而显示出高性能逻辑应用的前景，已知其进一步提高电子迁移率。本文首次详细研究了不同势垒层对InGaAs MOSFET模拟性能的影响。模拟应用的器件参数，如跨导（gm），跨导驱动电流比（gm/IDS），漏电导（gd），固有增益（gm/gd），和单位增益截止频率（fT）的帮助下，器件模拟器进行了研究。发现阻挡层通常改善这种器件的模拟性能;双阻挡层显示出最佳性能。本文还研究了沟道中铟含量的变化对具有双势垒层的InGaAs MOSFET模拟性能的影响。据发现，较高的In含量的结果在更好的模拟性能，这样的设备。
A barrier layer in an InGaAs MOSFET, which shows promise for high-performance logic applications due to enhanced electron mobility, is known to further improve the electron mobility. In this paper, a detailed investigation of the impact of different barrier layers on the analog performance of an InGaAs MOSFET is reported for the first time. The device parameters for analog applications, such as transconductance (gm), transconductance-to-drive current ratio (gm/IDS), drain conductance (gd), intrinsic gain (gm/gd), and unity-gain cutoff frequency (fT) are studied with the help of a device simulator. A barrier layer is found to improve the analog performance of such a device in general; with a double-barrier layer showing the best performance. An investigation on the impact of varying the indium content in the channel on the analog performance of an InGaAs MOSFET with a double-barrier layer is also reported in this paper. It is found that a higher In content results in better analog performance of such devices.