Lasing Characteristics of 1.2 µm Highly Strained GaInAs/GaAs Quantum Well Lasers
Lasing Characteristics of 1.2 µm Highly Strained GaInAs/GaAs Quantum Well Lasers
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1.2 µm 高应变 GaInAs/GaAs 量子阱激光器的激光特性
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
K. Iga
中科院分区：
文献类型：
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作者：
T. Kondo;D. Schlenker;T. Miyamoto;Zhibiao Chen;M. Kawaguchi;E. Gouardes;F. Koyama;K. Iga
在这项研究中，我们展示了一种高应变的1.2µm GaInAs/GaAs量子阱激光器，可用于高速局域网。采用GaInP或AlGaAs包层的边缘发射激光器已经被制造出来。我们已经实现了gainp包层激光器的阈值电流密度低至170 a /cm2，以及algaas包层激光器在30°C至120°C范围内高达211 K的高特性温度T0。材料增益系数g0估计为1550 cm-1，与0.98µm GaInAs激光器相当。在无散热器的连续波条件下进行了初步寿命测试，300 h后寿命没有明显下降。我们还展示了1.2µm波段的AlAs氧化物约束激光器。
In this study, we demonstrate a highly strained 1.2 µm GaInAs/GaAs quantum well laser which may be used in high-speed local area networks. Edge emitting lasers with either a GaInP or AlGaAs cladding layer have been fabricated. We have achieved a threshold current density as low as 170 A/cm2 for GaInP-cladding-layer lasers and a high characteristic temperature T0 as high as 211 K from 30°C to 120°C for AlGaAs-cladding-layer lasers. The material gain coefficient g0 was estimated to be 1550 cm-1 which is comparable to that of 0.98 µm GaInAs lasers. A preliminary lifetime test under heatsink-free CW condition was carried out, which shows no notable degradation after 300 h. We also demonstrated an AlAs oxide confinement laser in a 1.2 µm wavelength band.