Development of High-Reliability and -Stability Chemical Sensors Based on an Extended-Gate Type Amorphous Oxide Semiconductor Thin-Film Transistor
Development of High-Reliability and -Stability Chemical Sensors Based on an Extended-Gate Type Amorphous Oxide Semiconductor Thin-Film Transistor
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DOI：
10.1021/acsaelm.9b00844
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发表时间：
2020-02
期刊：
影响因子：
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通讯作者：
Yuki Hashima;Takanori Takahashi;Y. Ishikawa;Y. Uraoka
中科院分区：
文献类型：
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作者：
Yuki Hashima;Takanori Takahashi;Y. Ishikawa;Y. Uraoka
我们报告了一种化学传感器，具有高可靠性和长期稳定性，这是通过采用非晶氧化物半导体（AOS）作为沟道材料在扩展栅的th…
We report a chemical sensor that exhibits high reliability and long-term stability; this is achieved by employing an amorphous oxide semiconductor (AOS) as a channel material in an extended-gate th...