Giant Magnetoresistance in Organic Spin Valves
Giant Magnetoresistance in Organic Spin Valves
复制标题
有机旋转阀中的巨磁阻
DOI：
10.1103/physrevlett.104.236602
复制
发表时间：
2010-06-11
影响因子：
8.6
通讯作者：
Shen, Jian
中科院分区：
文献类型：
--
作者：
Sun, Dali;Yin, Lifeng;Shen, Jian
Interfacial diffusion between magnetic electrodes and organic spacer layers is a serious problem in the organic spintronics which complicates attempts to understand the spin-dependent transport mechanism and hurts the achievement of a desirably high magnetoresistance (MR). We deposit nanodots instead of atoms onto the organic layer using buffer layer assist growth. Spin valves using this method exhibit a sharper interface and a giant MR of up to similar to 300%. Analysis of the current-voltage characteristics indicates that the spin-dependent carrier injection correlates with the observed MR.
