RIETVELD ANALYSIS AND MEM-BASED WHOLE-PATTERN FITTING UNDER PARTIAL PROFILE RELAXATION
RIETVELD ANALYSIS AND MEM-BASED WHOLE-PATTERN FITTING UNDER PARTIAL PROFILE RELAXATION
复制标题
部分轮廓松弛下的RIETVELD分析和基于MEM的全模式拟合
DOI:
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发表时间:
2000
期刊:
影响因子:
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通讯作者:
F. Izumi
中科院分区:
文献类型:
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作者:
F. Izumi
The Rietveld method [1] has been extensively used as a leading technique for refining structure parameters of a variety of metal and inorganic compounds. The severe overlap of reflections in the highQ region (Q =Q = 2π/d; Q: scattering vector, d: lattice-plane spacing) in powder diffraction patterns limits the quality and amount of structural information extractable from them in comparison with singlecrystal data. However, advances in synchrotron X-ray powder diffraction [2] and time-of-flight (TOF) neutron powder diffraction in recent years have enhanced the resolution, ∆d/d, pronouncedly, enabling us to determine very complex structures whose analyses were formerly difficult with powder data. Five years have passed since a Rietveldanalysis program RIETAN [3] was introduced in the wellknown book entitled "The Rietveld Method." RIETAN has two versions for angle-dispersive diffraction [3, 4] and TOF neutron diffraction [5]. It has been widely utilized, particularly in Japan, contributing to a large number of structural studies. For example, the structures of the first High-T. superconductors with fluorite and carbonate blocks were solved with RIETAN for TOF neutron diffraction [6]. This article reviews recent advances in RIETAN with a focus on our original technology: partial profile relaxation [7-9] and whole-pattern fitting based on a maximum-entropy method (MEM) [8, 10].