Continuous operation of a monolithic semiconductor terahertz source at room temperature
Continuous operation of a monolithic semiconductor terahertz source at room temperature
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DOI：
10.1063/1.4881182
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发表时间：
2014-06-02
影响因子：
4
通讯作者：
Razeghi, M.
中科院分区：
文献类型：
--
作者：
Lu, Q. Y.;Bandyopadhyay, N.;Razeghi, M.
我们展示了基于中红外量子级联激光器腔内差频产生的室温连续太赫兹光源。采用埋脊、埋复合分布反馈波导和切伦科夫相位匹配技术，降低了波导损耗，提高了连续波工作时的散热性能。在3.6 THz处获得了边模抑制比为20 dB的连续发射，输出功率可达3 μ W。通过增加有源区掺杂和器件面积来提高中红外功率，脉冲模式下THz峰值功率进一步放大到1.4 mW。(C)2014 AIP Publishing LLC.
We demonstrate room temperature continuous wave THz sources based on intracavity difference-frequency generation from mid-infrared quantum cascade lasers. Buried ridge, buried composite distributed-feedback waveguide with Cerenkov phase-matching scheme is used to reduce the waveguide loss and enhance the heat dissipation for continuous wave operation. Continuous emission at 3.6 THz with a side-mode suppression ratio of 20 dB and output power up to 3 mu W are achieved, respectively. THz peak power is further scaled up to 1.4 mW in pulsed mode by increasing the mid-infrared power through increasing the active region doping and device area. (C) 2014 AIP Publishing LLC.