Electrical conductivity of melts and their ability to form glasses in the system Ge + As + Te
Electrical conductivity of melts and their ability to form glasses in the system Ge + As + Te
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DOI：
10.1039/df9705000035
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发表时间：
1970
期刊：
影响因子：
--
通讯作者：
H. Krebs;P. Fischer
中科院分区：
文献类型：
--
作者：
H. Krebs;P. Fischer
在Ge + As + Te体系中，重Te原子促进了介晶pσ成键体系的形成。因此，玻璃形成区域很小，并且强烈依赖于淬火条件。如在Ge + Sb + Se和Ge + As + Se系统中一样，即使在水中淬火，Ge + As + Te系统中的所有金属导电熔体也凝固成晶体结构。然而，并非所有属于该系统的半导体熔体在这些条件下都会变成玻璃态。正如预期的那样，从凝固成玻璃结构的熔体到凝固成晶体结构的熔体的转变更加渐进，从金属熔体到半导体熔体的转变也是如此。在900 ~ 1000 °C的温度下，所有的半导体熔体都或多或少地具有金属导电性。在硫属化物系统中，熔化过程常常会产生与高压或强电场作用下的原子短程有序相同的成键机制。在高温下尤其如此。原子的强制流动性，它们更紧密的堆积和导电性的影响通常在同一方向上起作用，增强同一方向上的结构变化。
In the system Ge + As + Te, the heavy Te atom facilitates the formation of mesomeric pσ-bonding systems. The glass forming regions are thus small and depend strongly on the quenching conditions. As in the systems Ge + Sb + Se and Ge + As + Se all metallically conducting melts in the system Ge + As + Te solidify to a crystallline structure even when quenched in water. However, not all semiconducting melts belonging to this system become glassy under these conditions. As expected, the transition from melts solidifying to a glass structure to those solidifying to a crystalline structure is more gradual, as is also the transition from metallic to semiconducting melts. All the semiconducting melts become more or less metallically conducting at temperatures between 900 and 1000 °C. The transition can be described by a parabolical or a log log dependence on temperature.In the chalcogenide systems the melting process often enforces the same bonding mechanism with similar atomic short range order as does the application of high pressures or of strong electric fields. This is especially the case at high temperatures. The enforced mobility of the atoms, their tighter packing and the effect of electrical conductivity often act in the same direction, enhancing structural changes in the same direction.