Modulation of the dissipation factor in transparent AlZnO/ZrO2/AlZnO capacitors
Modulation of the dissipation factor in transparent AlZnO/ZrO2/AlZnO capacitors
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DOI：
10.1016/j.jallcom.2016.08.207
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发表时间：
2017-01-05
影响因子：
6.2
通讯作者：
Liu, Chang
中科院分区：
文献类型：
--
作者：
Zhang, Guozhen;Wu, Hao;Liu, Chang
采用原子层沉积法在石英玻璃衬底上制备了AlZnO/ZrO 2/AlZnO透明电容器。高频下的介电损耗随着ZrO 2厚度的增加而逐渐减小。为了进一步降低损耗因子，将具有约10 Ω的薄层电阻的复合AlZnO/AgNW/AlZnO膜用作透明电容器的顶部和底部电极。当使用复合电极时，电容密度从17 fF/μ m（2）提高到20 fF/μ m（2），同时仍然保持超低漏电流（在1V下为2.5 × 10（-9）A/cm（2））。更重要的是，1 MHz下的品质因数从最初的3.9提升到17.0，可以与一些普通金属电极相媲美。这种透明电容器在可见光范围内显示出高于70%的平均透射率，从而为透明集成电路的实际应用打开了大门。(C)© 2016 Elsevier B. V.版权所有。
Transparent AlZnO/ZrO2/AlZnO capacitors have been fabricated on quartz glass substrates by atomic layer deposition. The dielectric loss in high frequencies decreases gradually as the ZrO2 thickness increases. To further reduce the dissipation factor, the composite AlZnO/AgNW/AlZnO films with a sheet resistance of about 10 Omega are applied as both the top and bottom electrodes for transparent capacitors. The capacitance density is improved from 17 to 20 fF/mu m(2) while the ultra-low leakage current (2.5 x 10(-9) A/cm(2) at 1 V) still maintains when the composite electrode is used.. More importantly, the quality factor at 1 MHz is boosted from the initial 3.9 to 17.0 which can be comparable to some ordinary metal electrodes. Such transparent capacitors show an average transmittance above 70% in the visible range, and thus open the door to realistic applications in transparent integrated circuits. (C) 2016 Elsevier B.V. All rights reserved.