Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons
Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated with various-energy protons
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DOI：
10.1016/j.solmat.2008.09.044
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发表时间：
2009-06
影响因子：
6.9
通讯作者：
Shin‐ichiro Sato;H. Miyamoto;M. Imaizumi;K. Shimazaki;C. Morioka;K. Kawano;T. Ohshima
中科院分区：
文献类型：
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作者：
Shin‐ichiro Sato;H. Miyamoto;M. Imaizumi;K. Shimazaki;C. Morioka;K. Kawano;T. Ohshima
利用一维光学器件模拟器PC 1D对InGaP/GaAs/Ge三结太阳电池进行质子辐照退化建模。通过拟合3 J太阳电池在30 keV、150 keV、3 MeV和10 MeV质子辐照下的外量子效率，模拟了电池的短路电流和开路电压。估算了各子电池的少子扩散长度（KL）损伤系数和基区载流子浓度（RC）去除率。计算得到的ISC和VOC值与实验值吻合较好，精度为5%。这些结果证实，在这项研究中开发的退化建模方法是有效的3 J太阳能电池的寿命预测。
Degradation modeling of InGaP/GaAs/Ge triple-junction (3J) solar cells subjected to proton irradiation is performed with the use of a one-dimensional optical device simulator, PC1D. By fitting the external quantum efficiencies of 3J solar cells degraded by 30keV, 150keV, 3MeV, or 10MeV protons, the short-circuit currents (ISC) and open-circuit voltages (VOC) are simulated. The damage coefficients of minority carrier diffusion length (KL) and the carrier removal rate of base carrier concentration (RC) of each sub-cell are also estimated. The values of ISCand VOCobtained from the calculations show good agreement with experimental values at an accuracy of 5%. These results confirm that the degradation modeling method developed in this study is effective for the lifetime prediction of 3J solar cells.