On intrinsic secondary grain boundary dislocation arrays in high angle symmetrical tilt grain boundaries
On intrinsic secondary grain boundary dislocation arrays in high angle symmetrical tilt grain boundaries
复制标题
大角度对称倾斜晶界中本征二次晶界位错阵列
DOI：
10.1016/0036-9748(81)90240-4
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发表时间：
1981
期刊：
影响因子：
--
通讯作者：
V. Vítek
中科院分区：
文献类型：
--
作者：
A. Sutton;R. Balluffi;V. Vítek
原子计算的结果表明，边界结构的变化是严格连续的方式与小的变化的取向差。如果假设在这个范围内的边界结构在所有的取向差处都是连续变化的，那么我们就可以预言地构造出位于这个取向差范围内的任何边界的原子结构。它显示了如何执行这种结构。一旦单元序列已知，SGBD结构总是可以被分配给包含两种类型的结构单元的边界。它表明，这种SGBD结构不一定是在透射电子显微镜实验观察到的。
The results of atomistic calculations indicate that the boundary structures change in a strictly continuous manner with small changes in misorientation. If the assumption is made that the boundary structures in this range vary continuously at all misorientations then we may construct predictively the atomic structure of any boundary lying in this misorientation range. It is shown how this construction is performed. A SGBD structure can always be assigned to a boundary containing two types of structural unit once the sequence of units is known. It is shown that this SGBD structure is not necessarily that observed experimentally in the transmission electron microscopy.