High Temperature Die Interconnection Approaches
High Temperature Die Interconnection Approaches
复制标题
高温芯片互连方法
DOI：
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
C. Hoel
中科院分区：
文献类型：
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作者：
Firas Alshatnawi;M. Alhendi;Riadh Al;R. Sivasubramony;E. M. Abbara;K. Udara Somarathna;M. Poliks;P. Borgesen;D. Shaddock;N. Stoffel;C. Hoel
高温电子器件在高温耐受性、广泛的热循环和制造工艺方面面临着明显的挑战。最近的一篇论文证明了3D打印陶瓷基板的稳定性，打印金高达850°C。本工作解决了硅芯片与此类衬底互连的方法。在筛选了用于基于粘附力和处理高温的能力来金属化衬底的材料之后，成功地开发了三种芯片互连方法：表面安装、嵌入和倒装芯片连接。在高达500 °C的高温老化下以及在-40 °C和300 °C之间以及在室温和500 °C之间的热循环中监测每个结构的电阻。倒装芯片设计在高温老化环境中成功运行，嵌入式设计能够处理苛刻的热循环测试。
High temperature electronics face obvious challenges in terms of high temperature endurance, a wide range of thermal cycling, and fabrication processes. A recent paper demonstrated the stability of 3D printed ceramic substrates with printed gold up to 850°C. The present work addresses approaches to the interconnection of silicon die to such substrates. After screening the materials used to metallize the substrates based on adhesion and the capability of handling high temperatures, three methods of die interconnection were successfully developed: surface mounting, embedding, and flip-chip attach. The resistance of each structure was monitored under high temperature aging up to 500 °C and in thermal cycling between -40 °C and 300 °C, and between room temperature and 500 °C. The flip-chip design was shown to operate successfully in the high temperature aging environment and the embedded design was able to handle the harsh thermal cycling tests.