Degree of crystallinity and electrical transport properties of microcrystalline silicon carbon alloys
Degree of crystallinity and electrical transport properties of microcrystalline silicon carbon alloys
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DOI：
10.1080/13642819308220136
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发表时间：
1993-03
期刊：
影响因子：
--
通讯作者：
F. Demichelis;C. Pirri;E. Tresso
中科院分区：
文献类型：
--
作者：
F. Demichelis;C. Pirri;E. Tresso
分析了等离子体增强化学气相沉积法制备的未掺杂微晶硅碳薄膜的结构和电学性能。拉曼光谱和高分辨率透射电子显微镜表明，薄膜由硅微晶体组成，由晶界区包围，或由氢化非晶碳化硅通道相互连接或分开。电输运性质对薄膜结构的依赖性被检查和解释在不同的电导率机制方面。在300-420 K范围内，暗电导率随温度的变化与薄膜的结晶度有关。所提出的模型似乎与实验结果吻合得很好。
Abstract The structural and electrical properties of undoped microcrystalline silicon-carbon films deposited by plasma-enhanced chemical vapour deposition are analysed. Raman spectroscopy and high-resolution transmission electron micro-scopy suggest that the films are constituted of silicon microcrystals, surrounded by a grain-boundary region, or interconnected or separated by a hydrogenated amorph-ous silicon carbide channel. The dependences of the electrical transport properties upon the structure of the films are examined and interpreted in terms of different conductivity mechanisms. The dark conductivities as a function of temperature in the range 300–420 K show a dependence on the degree of crystallinity of the films. The proposed models seem to fit the experimental results well.